STW6NB90 datasheet(1/5 Pages) STMICROELECTRONICS

部件名	STW6NB90

功能描述	N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STW6NB90

N - CHANNEL 900V - 1.7

Ω - 6.3A - TO-247

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.7

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s

HIGH CURRENT, HIGH SPEED SWITCHING

®

INTERNAL SCHEMATIC DIAGRAM

February 1999

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

900

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

6.3

A

ID

Drain Current (continuous) at Tc = 100

oC4

A

IDM(

•)

Drain Current (pulsed)

25

A

Ptot

Total Dissipation at Tc = 25

o C

160

W

Derating Factor

1.28

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW6NB90

900 V

< 2

Ω

6.3 A

1/5

类似零件编号 - STW6NB90

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STMicroelectronics	STW6NB100	86Kb / 8P	N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET Oct-1999
Inchange Semiconductor ...	STW6NB100	351Kb / 2P	isc N-Channel MOSFET Transistor

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制造商	部件名	数据表	功能描述
STMicroelectronics	STB6NB90	48Kb / 5P	N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET Feb-1999
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