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STW7NB80 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW7NB80
功能描述  N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW7NB80 数据表(HTML) 3 Page - STMicroelectronics

  STW7NB80 Datasheet HTML 1Page - STMicroelectronics STW7NB80 Datasheet HTML 2Page - STMicroelectronics STW7NB80 Datasheet HTML 3Page - STMicroelectronics STW7NB80 Datasheet HTML 4Page - STMicroelectronics STW7NB80 Datasheet HTML 5Page - STMicroelectronics STW7NB80 Datasheet HTML 6Page - STMicroelectronics STW7NB80 Datasheet HTML 7Page - STMicroelectronics STW7NB80 Datasheet HTML 8Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =400 V
ID =3 A
RG =4.7
Ω
VGS =10 V
19
9
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 640 V
ID =6 A
VGS =10 V
RG =4.7
Ω
VGS =10 V
33
11
14
47
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =640 V
ID =6 A
RG =4.7
Ω VGS =10 V
11
9
16
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
6. 5
26
A
A
VSD (
∗)Forward On Voltage
ISD =6 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =6 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
700
5.8
16.5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STW7NB80
3/8



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