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STW7NC80Z 数据表(PDF) 1 Page - STMicroelectronics |
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STW7NC80Z 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() 1/8 July 2000 STW7NC80Z N-CHANNEL 800V - 1.5 Ω - 6A TO-247 Zener-Protected PowerMESH™III MOSFET s TYPICAL RDS(on) = 1.5Ω s EXTREMELY HIGH dv/dt CAPABILITY s GATE-TO-SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPE VDSS RDS(on) ID STW7NC80Z 800 V < 1.8 Ω 6A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 800 V VGS Gate- source Voltage ±25 V ID Drain Current (continuos) at TC = 25°C 6A ID Drain Current (continuos) at TC = 100°C 3.8 A IDM (q) Drain Current (pulsed) 24 A PTOT Total Dissipation at TC = 25°C 160 W Derating Factor 1.28 W/°C IGS Gate-source Current ±50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K Ω) 3KV dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-247 |
类似零件编号 - STW7NC80Z |
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类似说明 - STW7NC80Z |
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