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STW80NF10 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW80NF10
功能描述  N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET™ POWER MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW80NF10 数据表(HTML) 3 Page - STMicroelectronics

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STW80NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 50V, ID = 40A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
40
ns
tr
Rise Time
145
ns
Qg
Total Gate Charge
VDD = 80V, ID = 80A,
VGS = 10V
140
189
nC
Qgs
Gate-Source Charge
23
nC
Qgd
Gate-Drain Charge
51
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off-Delay Time
VDD = 27V, ID = 40A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
134
ns
tf
Fall Time
115
ns
td(off)
Off-voltage Rise Time
Vclamp =80V, ID =80A
RG =4.7Ω, VGS = 10V
111
ns
tf
Fall Time
(see test circuit, Figure 5)
125
ns
tc
Cross-over Time
185
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
80
A
ISDM (1)
Source-drain Current (pulsed)
320
A
VSD (2)
Forward On Voltage
ISD = 80A, VGS = 0
1.5
V
trr
Reverse Recovery Time
ISD = 80A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
155
ns
Qrr
Reverse Recovery Charge
850
nC
IRRM
Reverse Recovery Current
11
A
Thermal Impedence
Safe Operating Area



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