STW9NA60 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STW9NA60

功能描述	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

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STW9NA60

STH9NA60FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 0.69

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

ST W9NA60

STH9NA60F I

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

600

V

VGS

G ate-source Volt age

± 30

V

ID

Drain Current (continuous) at Tc =25

oC6.4

9.5

A

ID

Drain Current (continuous) at Tc =100

oC4

6

A

IDM (

•)

Drain Current (pulsed)

38

A

Ptot

T otal Dissipat ion at Tc =25

oC70

160

W

Derating Factor

0.56

1.28

W /

o C

VISO

I nsulation W ithstand Voltage (DC)



4000

V

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW 9NA60

STH9NA60F I

600 V

<0.8

Ω

<0.8

Ω

9. 5 A

6. 4 A

October 1998

1

2

3

TO-247

ISOWATT218

1

2

3

1/10

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