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H8SX/1663 数据表(PDF) 927 Page - Renesas Technology Corp

部件名 H8SX/1663
功能描述  Renesas 32-Bit CISC Microcomputer H8SX Family / H8SX/1600 Series
PDF  1158 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

H8SX/1663 数据表(HTML) 927 Page - Renesas Technology Corp

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Section 21 Flash Memory (0.18-
µm F-ZTAT Version)
Rev.1.00 Jun. 07, 2006 Page 875 of 1102
REJ09B0294-0100
Section 21 Flash Memory (0.18-
µm F-ZTAT Version)
The flash memory has the following features. Figure 21.1 is a block diagram of the flash memory.
21.1
Features
• Size
Product Classification
ROM Size
ROM Address
H8SX/1663
R5F61663
384 kbytes
H'000000 to H'05FFFF (modes 2, 6, 7)
H8SX/1664
R5F61664
512 kbytes
H'000000 to H'07FFFF (modes 2, 6, 7)
• Programming/erasing interface by the download of on-chip program
This LSI has a programming/erasing program. After downloading this program to the on-chip
RAM, programming/erasing can be performed by setting the parameters.
• Programming/erasing time
Programming time: 3 ms (typ) for 128-byte simultaneous programming
Erasing time: 2000 ms (typ) per 1 block (64 kbytes)
• Number of programming
The number of programming can be up to 100 times at the minimum. (1 to 100 times are
guaranteed.)
• Three on-board programming modes
SCI boot mode:
Using the on-chip SCI_4, the user MAT can be programmed/erased. In
SCI boot mode, the bit rate between the host and this LSI can be adjusted
automatically.
USB boot mode:
Using the on-chip USB, the user MAT can be programmed/erased.
User program mode: Using a desired interface, the user MAT can be programmed/erased.
• Off-board programming mode
Programmer mode: Using a PROM programmer, the user MAT can be programmed/erased.
• Programming/erasing protection
Protection against programming/erasing of the flash memory can be set by hardware
protection, software protection, or error protection.
• Flash memory emulation function using the on-chip RAM
Realtime emulation of the flash memory programming can be performed by overlaying parts
of the flash memory (user MAT) area and the on-chip RAM.



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