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H8SX/1663 数据表(PDF) 927 Page - Renesas Technology Corp |
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H8SX/1663 数据表(HTML) 927 Page - Renesas Technology Corp |
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927 / 1158 page ![]() Section 21 Flash Memory (0.18- µm F-ZTAT Version) Rev.1.00 Jun. 07, 2006 Page 875 of 1102 REJ09B0294-0100 Section 21 Flash Memory (0.18- µm F-ZTAT Version) The flash memory has the following features. Figure 21.1 is a block diagram of the flash memory. 21.1 Features • Size Product Classification ROM Size ROM Address H8SX/1663 R5F61663 384 kbytes H'000000 to H'05FFFF (modes 2, 6, 7) H8SX/1664 R5F61664 512 kbytes H'000000 to H'07FFFF (modes 2, 6, 7) • Programming/erasing interface by the download of on-chip program This LSI has a programming/erasing program. After downloading this program to the on-chip RAM, programming/erasing can be performed by setting the parameters. • Programming/erasing time Programming time: 3 ms (typ) for 128-byte simultaneous programming Erasing time: 2000 ms (typ) per 1 block (64 kbytes) • Number of programming The number of programming can be up to 100 times at the minimum. (1 to 100 times are guaranteed.) • Three on-board programming modes SCI boot mode: Using the on-chip SCI_4, the user MAT can be programmed/erased. In SCI boot mode, the bit rate between the host and this LSI can be adjusted automatically. USB boot mode: Using the on-chip USB, the user MAT can be programmed/erased. User program mode: Using a desired interface, the user MAT can be programmed/erased. • Off-board programming mode Programmer mode: Using a PROM programmer, the user MAT can be programmed/erased. • Programming/erasing protection Protection against programming/erasing of the flash memory can be set by hardware protection, software protection, or error protection. • Flash memory emulation function using the on-chip RAM Realtime emulation of the flash memory programming can be performed by overlaying parts of the flash memory (user MAT) area and the on-chip RAM. |
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