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H8SX/1663 数据表(PDF) 1103 Page - Renesas Technology Corp |
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H8SX/1663 数据表(HTML) 1103 Page - Renesas Technology Corp |
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1103 / 1158 page ![]() Section 25 Electrical Characteristics Rev.1.00 Jun. 07, 2006 Page 1051 of 1102 REJ09B0294-0100 Item Symbol Min. Max. Unit Test Conditions Precharge time 1 for self-refresh t RPS1 2.5 × t cyc – 20 ns Figure 25.28 Precharge time 2 for self refresh t RPS2 3.0 × t cyc – 20 ns Figure 25.27 Address delay time 2 t AD2 1 18 ns CS delay time 4 t CSD4 1 15 ns Figures 25.29 to 25.32 DQM delay time t DQMD 1 15 ns CKE delay time t CKED 1 15 ns Table 25.6 Bus Timing (4) Conditions: V CC = PLLVCC = DrVCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, Vref = 3.0 V to AVCC, V SS = PLLVSS = DrVSS = AVSS = 0 V, Bφ = 8 MHz to 50 MHz, T a = –20°C to +75°C (regular specifications), T a = –40°C to +85°C (wide-range specifications) Item Symbol Min. Max. Unit Test Conditions Read data setup time 3 t RDS3 12 ns Read data hold time 3 t RDH3 0 ns Figures 25.29 to 25.32 Read data setup time 4 t RDS4 12 ns Read data hold time 4 t RDH4 0 ns Write data delay time 2 t WDD2 15 ns Write data hold time 4 t WDH4 1 ns |
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