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H8SX/1663 数据表(PDF) 1117 Page - Renesas Technology Corp |
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H8SX/1663 数据表(HTML) 1117 Page - Renesas Technology Corp |
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1117 / 1158 page ![]() Section 25 Electrical Characteristics Rev.1.00 Jun. 07, 2006 Page 1065 of 1102 REJ09B0294-0100 Tp B φ A23 to A0 RAS LUCAS, LLCAS BS OE, RD WE D15 to D0 OE, RD WE D15 to D0 AS Tr Tc1 tCPW1 tAC3 tRCH tRCS1 Tc2 Tc1 Tc2 Read Write tDACD1 tDACD2 Note: Timming of DACK when DDS = 0 and EDDS = 0 Timming of RAS when RAST = 0 RD/ WR RD/ WR (DKC = 0) DACK3 to DACK0 (DKC = 1) DACK3 to DACK0 tDACD2 Figure 25.21 DRAM Access Timing: Two-State Burst Access |
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