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H8SX/1663 数据表(PDF) 1120 Page - Renesas Technology Corp |
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H8SX/1663 数据表(HTML) 1120 Page - Renesas Technology Corp |
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1120 / 1158 page ![]() Section 25 Electrical Characteristics Rev.1.00 Jun. 07, 2006 Page 1068 of 1102 REJ09B0294-0100 Tp Tr Tc1 Tc2 Tc3 Tc1 Tc2 Tc3 B φ A23 to A0 RAS LUCAS, LLCAS OE, RD WE D15 to D0 OE, RD WE tRCH tRCS2 tAC8 tCPW2 D15 to D0 AS Read Write Note: Timming of DACK when DDS = 1 and EDDS = 1 Timming of RAS when RAST = 1 BS RD/ WR RD/ WR (DKC = 0) DACK3 to DACK0 (DKC = 1) DACK3 to DACK0 Figure 25.24 DRAM Access Timing: Three-State Burst Access |
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