STW9NC80Z datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STW9NC80Z

功能描述	N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH™ II MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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September 2002

STW9NC80Z

N-CHANNEL 800V - 0.82

Ω - 9.4A TO-247

Zener-Protected PowerMESH™III MOSFET

(1)ISD ≤9.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

n

TYPICAL RDS(on) = 0.82Ω

n

EXTREMELY HIGH dv/dt CAPABILITY

n

GATE-TO-SOURCE ZENER DIODES

n

100% AVALANCHE TESTED

n

VERY LOW INTRINSIC CAPACITANCES

n

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

n

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

n

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW9NC80Z

800 V

<0.9

Ω

9.4 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

800

V

VGS

Gate- source Voltage

±25

V

ID

Drain Current (continuous) at TC = 25°C

9.4

A

ID

Drain Current (continuous) at TC = 100°C

5.9

A

IDM (1)

Drain Current (pulsed)

38

A

PTOT

Total Dissipation at TC = 25°C

190

W

Derating Factor

1.52

W/°C

IGS

Gate-source Current

±50

mA

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

4KV

dv/dt(q)

Peak Diode Recovery voltage slope

3

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-247

类似零件编号 - STW9NC80Z

制造商	部件名	数据表	功能描述
STMicroelectronics	STW9NC70Z	248Kb / 8P	N-CHANNEL 700V - 0.90 ohm - 7.5A TO-247 Zener-Protected PowerMESH™ II MOSFET Mar-2001

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制造商	部件名	数据表	功能描述
STMicroelectronics	STU9NB80	82Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STU9NC80Z	407Kb / 10P	N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET Sep-2000
	STW12NK80Z	299Kb / 9P	N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH?줡ower MOSFET Oct-2002
	STW6NC90Z	243Kb / 8P	N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH™ III MOSFET Oct-2000
	STW7NB80	88Kb / 8P	N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET Dec-1999
	STW7NC80Z	248Kb / 8P	N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET Jul-2000
	STW7NC90Z	243Kb / 8P	N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET May-2001
	STW8NB80	50Kb / 5P	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET Jan-1999
	STW9NB80	86Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW11NK90Z	239Kb / 12P	N-channel 900V - 0.82OHM - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET 25-Jul-2006

More results

STW9NC80Z 数据表(PDF) 1 Page - STMicroelectronics

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