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ISO15 数据表(PDF) 15 Page - Renesas Technology Corp

部件名 ISO15
功能描述  ISOLATED 3.3-V FULL AND HALF-DUPLEX RS-485 TRANSCEIVERS
PDF  20 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

ISO15 数据表(HTML) 15 Page - Renesas Technology Corp

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APPLICATION INFORMATION
Transient Voltages
ISO
GND2
N
ISO
IN
Z
V
= V
Z
Z
+
(1)
x
9
GND2
ISO
9
4
N
ISO
IN
V
R
10
=
=
V
R
R
10
6 10
+
+
(2)
ISO
ISO
ISO
IN
IN
1
C
GND2
C
1
1
1
N
C
C
16
C
V
1
1
=
=
=
= 0.94
V
1
1
+
+
+
(3)
VN
CIN
RISO
RIN
A,B, Y,orZ
SystemGround (GND1)
BusReturn (GND2)
16V
CISO
ISO15
ISO35
www.ti.com................................................................................................................................................................ SLOS580B – MAY 2008 – REVISED JULY 2008
Isolation of a circuit insulates it from other circuits and earth so that noise develops across the insulation rather
than circuit components. The most common noise threat to data-line circuits is voltage surges or electrical fast
transients that occur after installation. The transient ratings of the ISO15 and ISO35 are sufficient for all but the
most severe installations. However, some equipment manufacturers use their ESD generators to test transient
susceptibility of their equipment, and can exceed insulation ratings. ESD generators simulate static discharges
that may occur during device or equipment handling with low-energy but high voltage transients.
Figure 21 models the ISO15 and ISO35 bus IO connected to a noise generator. CIN and RIN is capacitance or
resistance across the device and any other stray or added capacitance or resistance across the A or B pin to
GND2. CISO and RISO is the capacitance and resistance between GND1 and GND2 of the ISO15 and ISO35 plus
those of any other insulation (transformer, etc.). The stray inductance is assumed to be negligible. From this
model, the voltage at the isolated bus return is,
and will always be less than 16 V from VN. If the ISO15 and ISO35 are tested as a stand-alone device, RIN = 6
נ
104
Ω, CIN = 16
נ
10–12 F, RISO = 10
9Ω and C
ISO = 10
–12 F.
Note from Figure 21 that the resistor ratio determines the voltage ratio at low frequency and it is the inverse
capacitance ratio at high frequency. In the stand-alone case and for low frequency,
or essentially all of noise appears across the barrier. At high frequency,
and 94% of VN appears across the barrier. As long as RISO is greater than RIN and CISO is less than CIN, most of
transient noise appears across the isolation barrier.
It is not recommend for the user to test equipment transient susceptibility with ESD generators, or consider
product claims of ESD ratings above the barrier transient ratings of an isolated interface. ESD is best managed
through recessing or covering connector pins in a conductive connector shell and installer training.
Figure 21. Noise Model
Copyright © 2008, Texas Instruments Incorporated
Submit Documentation Feedback
15
Product Folder Link(s): ISO15 ISO35



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