| 数据搜索系统,热门电子元器件搜索 |
|
H8SX/1663M 数据表(PDF) 1421 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
H8SX/1663M 数据表(HTML) 1421 Page - Renesas Technology Corp |
|
1421 / 1504 page ![]() Section 30 Electrical Characteristics Rev. 2.00 Sep. 24, 2008 Page 1389 of 1468 REJ09B0412-0200 Tp B φ A23 to A0 RAS LUCAS, LLCAS BS OE, RD WE D15 to D0 OE, RD WE D15 to D0 AS Tr Tc1 tCPW1 tAC3 tRCH tRCS1 Tc2 Tc1 Tc2 Read Write tDACD1 tDACD2 Note: Timming of DACK when DDS = 0 and EDDS = 0 Timming of RAS when RAST = 0 RD/ WR RD/ WR (DKC = 0) DACK3 to DACK0 (DKC = 1) DACK3 to DACK0 tDACD2 Figure 30.21 DRAM Access Timing: Two-State Burst Access |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |