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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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H8SX/1663M 数据表(PDF) 1449 Page - Renesas Technology Corp |
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H8SX/1663M 数据表(HTML) 1449 Page - Renesas Technology Corp |
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1449 / 1504 page  Section 30 Electrical Characteristics Rev. 2.00 Sep. 24, 2008 Page 1417 of 1468 REJ09B0412-0200 Item Symbol Min. Typ. Max. Unit Test Conditions Erasure time (total)* 1, *2, *4 Σ tE 3.4 9 H8SX/1663R, H8SX/1663M s/384 Kbytes T a = 25°C 4.5 12 H8SX/1664R H8SX/1664M s/512 Kbytes 9.0 24 H8SX/1668R H8SX/1668M s/1 Mbyte Σ tPE 6.8 18 H8SX/1663R, H8SX/1663M s/384 Kbytes T a = 25°C 9.0 24 H8SX/1664R H8SX/1664M s/512 Kbytes Programming, Erasure time (total)* 1, *2, *4 18.0 48 H8SX/1668R H8SX/1668M s/1 Mbyte Overwrite count N WEC 100* 3 times Data save time* 4 T DRP 10 years Notes: 1. Programming time and erase time depend on data in the flash memory. 2. Programming time and erase time do not include time for data transfer. 3. All the characteristics after programming are guaranteed within this value (guaranteed value is from 1 to Min. value). 4. Characteristics when programming is performed within the Min. value 5. V CC = PLLVCC = DrVCC = 2.95 V to 3.60 V in the H8SX/1668M Group. |
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