STX83003

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s

ST83003 SILICON IN TO-92 PACKAGE

s

MEDIUM VOLTAGE CAPABILITY

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

APPLICATIONS:

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTION

The device is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The STX83003 is expressly designed for a new

solution to be used in compact fluorescent lamps,

where it is coupled with the STX93003, its

complementary PNP transistor.

®

INTERNAL SCHEMATIC DIAGRAM

October 2002

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

700

V

400

V

Emitter-Base Voltage

V

Collector Current

1

A

3

A

Base Current

0.5

A

1.5

A

1.5

W

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

TO-92

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