STX93003 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-Amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

83.3

200

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = -500V

Tj = 125

-1

-5

V(BR)EBO

Emitter Base

Breakdown Voltage

(IC = 0)

IE = -10 mA

-5

-10

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -10 mA

L = 25 mH

-400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -0.5 A

IB = -0.1 A

IC = -0.35 A

IB = -50 mA

-0.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -0.5 A

IB = -0.1 A

-1

hFE

∗

DC Current Gain

IC = -10 mA

VCE = -5 V

IC = -0.35 A

VCE = -5 V

IC = -1 A

VCE = -5 V

RESISTIVE LOAD

Rise Time

Storage Time

Fall Time

IC = -0.35 A

VCC = 125 V

IB1 = -70 mA

IB2 = 70 mA

≥ 25 µs

(see Figure 2)

1.5

2.2

0.1

2.9

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = -0.5 A

IB1 = -0.1 A

VBE(off) = 5 V

L = 10 mH

Vclamp = 300 V

(see Figure 1)

400

Esb

Avalanche Energy

L = 4 mH

C = 1.8 nF

IBR

≤ 2.5 A

oC < TC < 125oC

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.

STX93003

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