0

123

456

78

0

2

4

6

8

10

180

O

= 180

o

=120

o

=90

o

=60

o

=30

o

T(RMS)

I

(A)

P(W)

Fig.1 : Maximum power dissipation versus RMS

on-state current.

0

1020 304050

60

708090 100 110 120 130

0

2

4

6

8

10

=180

o

Tcase( C)

o

I

(A)

T(RMS)

Fig.3 : RMS on-state current versus case tempera-

ture.

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Igt

Tj( C)

o

Ih

-40

-20

0

20

40

60

80

100

120 140

Igt[Tj]

Igt[Tj=25 C]

o

Ih[Tj]

Ih[Tj=25 C]

o

Fig.5 : Relative variation of gate trigger current and

holding current versus junction temperature.

P(W)

0

102030405060708090 100 110 120 130

0

2

4

6

8

10

-90

-95

-100

-105

-110

-115

-120

-125

Rth = 0 C/W

2.5 C/W

5C/W

7.5 C/W

o

o

o

o

Tamb ( C)

o

Tcase ( C)

o

Fig.2 : Correlation between maximum power dissi-

pation and maximum allowable temperature

(Tamb and Tcase) for different thermal resistances

heatsink + contact.

1E-3

1E-2

1E-1

1E +0

1E +1

1E+2 5E +2

0.01

0.1

1

Zth/Rth

Zth (j-c)

Zt h( j-a )

tp (s )

Fig.4 : Thermal transient impedance junction to

case and junction to ambient versus pulse dura-

tion.

1

10

100

1000

0

20

40

60

80

100

Tj initial = 25 C

o

Number of cycles

I

(A)

TSM

Fig.6 : Non repetitive surge peak on-state current

versus number of cycles.

®

T820W / 830W

3/5