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STF4LNK60Z 数据表(PDF) 3 Page - STMicroelectronics |
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STF4LNK60Z 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() STD4LNK60Z - STF4LNK60Z Electrical ratings 3/11 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220FP DPAK VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 3.3 (1) 1. Limited by package 3.3 A ID Drain current (continuous) at TC = 100 °C 2 (1) 2A IDM Drain current (pulsed) 13.2(1) 13.2 A PTOT Total dissipation at TC = 25 °C 25 70 W Derating factor 0.2 0.56 W/°C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 -- V Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220FP DPAK Rthj-case Thermal resistance junction-case 5 1.79 °C/W Rthj-pcb Thermal resistance junction-pcb(1) 1. Minimum footprint -- 50 °C/W Rthj-amb Thermal resistance junction-amb 62.5 -- °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) TBD A EAS Single pulse avalanche energy (1) 1. Starting Tj = 25 °C, ID = IAR, VDD = 50 V TBD mJ |
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