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TDA1675 数据表(PDF) 3 Page - STMicroelectronics

部件名 TDA1675
功能描述  VERTICAL DEFLECTION CIRCUIT
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TDA1675 数据表(HTML) 3 Page - STMicroelectronics

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DC ELECTRICAL CHARACTERISTICS (VS = 35V, Tamb = 25
oC, unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Fig.
I2
Pin 2 quiescent current
I1 = 0
16
36
mA
1b
- I9
Ramp generator bias current
V9 = 0
0.02
1
µA1b
- I9
Ramp generator current
V9 = 0 ; - I7 = 20
µA
18.5
20
21.5
µA1b
 ∆I 9
I 9
Ramp generator non linearity
∆V9 = 0 to 15V, - I7 = 20µA
0.2
1
%
1b
I14
Pin 14 quiescent current
25
45
mA
1b
V1
Quiescent output voltage
VS = 35V, Ra = 2.2k
Ω, Rb = 1kΩ
VS = 15V, Ra = 390
Ω, Rb = 1kΩ
16.4
6.9
17.8
7.5
19.5
8.1
V
V
1a
V1L
Output saturation voltage to ground
I1 = 1.2A,
1
1.4
V
1c
V1H
Output saturation voltage to supply
- I1 = 1.2A
1.6
2.2
V
1d
V4
Oscillator virtual ground
0.45
V
1b
V7
Regulated voltage at pin 7
- I7 = 20
µA
6.3
6.6
7
V
1b
∆V 7
∆VS
Regulated voltage drift with supply
voltage
∆VS = 15 to 35V
1
2
mV
V
1b
V11
Amplifier input (+) reference voltage
4.1
4.4
4.7
V
1b
V13
Blanking output saturation voltage
I13 = 10 mA
0.35
0.5
V
1a
V15
Pin 15 saturation voltage to ground
I15 = 20 mA
1
1.5
V
1a
Figure 1 : DC Test Circuit.
12
1
2
9
7
8
10
VS
I 14
V11
-I 7
V
-I 9
5
3
75k
Ω
I1
11
I 2 + I 1
9
4
B
1V
V4
A
4
V7
14
Figure 1b
1
2
11
8
4
1V
12
5
8V
0.1µF
10
VS
V1L
+I 1
14
Figure 1c
1
2
11
8
4
1V
14
12
5
8V
0.1µF
10
VS
V1H
-I1
Figure 1d
R a
7
12
13
14
15
1
2
4
5
9
11
8
10
0.1µF
I13
VS
I15
V15
V13
V1
R b
-I 9
1V
8V
Figure 1a
TDA1675A
3/11



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