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STK40N2LLH5 数据表(PDF) 5 Page - STMicroelectronics |
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STK40N2LLH5 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STK40N2LLH5 Electrical characteristics 5/13 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 15 V, ID= 20 A, RG=4.7 Ω, VGS=4.5 V (see Figure 2) TBD TBD ns ns td(off) tf Turn-off delay time Fall time TBD TBD ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by package Source-drain current Source-drain current (pulsed) 40 160 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD= 20 A, VGS=0 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 40 A, di/dt = 100 A/µs, VDD=20 V, TJ=150°C (see Figure 7) TBD TBD TBD ns nC A |
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