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STK800 数据表(PDF) 5 Page - STMicroelectronics |
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STK800 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STK800 Electrical characteristics 5/16 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 15V, ID= 10A, RG=4.7Ω, VGS=4.5V (see Figure 15) 15 50 ns ns td(off) tf Turn-off delay time Fall time VDD=15V, ID= 10A, RG=4.7Ω, VGS=4.5V (see Figure 15) 45 15 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by package Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on Voltage ISD= 20A, VGS=0 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 20A, di/dt = 100A/µs, VDD=20V, Tj=150°C (see Figure 20) 32 28.8 1.8 ns nC A |
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