STK820 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STK820

4/15

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS = max rating,Tc=125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

12.5

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 10.5 A

VGS= 4.5 V, ID= 10.5 A

0.0058

0.0066

0.0073

0.008

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz, VGS=0

1425

657

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=12.5 V, ID = 21 A

VGS =4.5 V

(see Figure 14)

9.5

3.6

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD=12.5 V, ID = 12 A

VGS =4.5 V

(see Figure 19)

1.6

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

0.8

Ω

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