STK850 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STK850

4/16

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

12.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 15A

VGS= 4.5V, ID= 15A

0.0024

0.0029

0.0035

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

3150

940

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15V, ID = 30A

VGS =4.5V

(see Figure 16)

24.5

8.2

32.5

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD=15V, ID = 12A

VGS =4.5V

(see Figure 21)

0.6

7.2

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20mV

open drain

1.1

Ω

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