ZXMP3F37DN8

Absolute maximum ratings

Parameter

Symbol

Limit

Unit

Drain-Source voltage

-30

V

Gate-Source voltage

±20

V

(b)(d)

(b)(d)

(a)(d)

(f)

-7.3

-5.9

-5.7

-8.3

V

Pulsed Drain current

(c)

-36

A

Continuous Source current (Body diode)

(b)

-3.5

A

Pulsed Source current (Body diode)

(c)

-36

A

(a)(d)

Linear derating factor

1.25

10

W

mW/

°C

(a)(e)

Linear derating factor

1.8

14

W

mW/

°C

(b)(d)

Linear derating factor

2.1

17

W

mW/

°C

(a)(f)

Linear derating factor

2.7

21.5

W

mW/

°C

Operating and storage temperature range

-55 to 150

°C

Thermal resistance

Parameter

Symbol

Value

Unit

Junction to ambient

(a)(d)

100

°C/W

Junction to ambient

(b)(e)

70

°C/W

Junction to ambient

(b)(d)

60

°C/W

Junction to lead

(a)(f)

46.42

°C/W

NOTES:

(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions.

(b) For a dual device surface mounted on FR4 PCB measured at t

≤ 10 sec.

(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction

temperature.

(d) For a dual device with one active die.

(e) For a dual device with 2 active die running at equal power.

(f)

Thermal resistance from junction to solder-point (at the end of the drain lead).

Issue 1 - August 2008

2

© Diodes Incorporated 2008

www.zetex.com

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