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STS9NH3LL 数据表(PDF) 1 Page - STMicroelectronics |
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STS9NH3LL 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() December 2007 Rev 3 1/13 13 STS9NH3LL N-channel 30 V - 0.018 Ω - 9 A - SO-8 low gate charge STripFET™ III Power MOSFET Features ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Switching losses reduced Application ■ Switching applications Description This application specific Power MOSFET is the third generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STS9NH3LL 30 V 0.022 Ω 9 A SO-8 Table 1. Device summary Order code Marking Package Packaging STS9NH3LL S9NH3LL SO-8 Tape & reel www.st.com |
类似零件编号 - STS9NH3LL |
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类似说明 - STS9NH3LL |
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