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STW75NF30 数据表(PDF) 5 Page - STMicroelectronics

部件名 STW75NF30
功能描述  N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET??Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW75NF30 数据表(HTML) 5 Page - STMicroelectronics

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STW75NF30
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 150 V, ID = 30 A
RG = 4.7 Ω, VGS = 10 V,
(see Figure 14)
115
87
141
101
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse with limited by maximum temperature
Source-drain current
Source-drain current
(pulsed)
60
240
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 60 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 60 A,VDD = 60 V
di/dt = 100 A/µs
(see Figure 19)
252
2.5
20
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =60 A, VDD = 60 V
di/dt = 100 A/µs
Tj = 150°C (see Figure 19)
316
3.7
23.2
ns
µC
A



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