IRFD310 datasheet(1/8 Pages) VISHAY

部件名	IRFD310

功能描述	Power MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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1 / 8 page

Document Number: 91133

www.vishay.com

S-Pending-Rev. A, 23-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFD310, SiHFD310

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertiable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serveres as a

thermal link to the mounting surface for power dissipation

levels up to 1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 1.4 A (see fig. 12).

c. ISD ≤ 2.0 A, dI/dt ≤ 40 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V)

400

RDS(on) (Ω)VGS = 10 V

3.6

Qg (Max.) (nC)

17

Qgs (nC)

3.4

Qgd (nC)

8.5

Configuration

Single

N-Channel MOSFET

G

D

S

HEXDIP

D

S

G

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

HEXDIP

Lead (Pb)-free

IRFD310PbF

SiHFD310-E3

SnPb

IRFD310

SiHFD310

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

400

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

0.35

A

TC = 100 °C

0.22

Pulsed Drain Currenta

IDM

2.8

Linear Derating Factor

0.0083

W/°C

Single Pulse Avalanche Energyb

EAS

46

mJ

Avalanche Currenta

IAR

0.35

A

Repetitive Avalanche Energya

EAR

0.10

mJ

Maximum Power Dissipation

TC = 25 °C

PD

1.0

W

Peak Diode Recovery dV/dtc

dV/dt

4.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

* Pb containing terminations are not RoHS compliant, exemptions may apply

类似零件编号 - IRFD310

制造商	部件名	数据表	功能描述
Intersil Corporation	IRFD310	50Kb / 6P	0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRFD310	459Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)
Vishay Siliconix	IRFD310	528Kb / 9P	Power MOSFET 30-Aug-2021
International Rectifier	IRFD310PBF	1Mb / 8P	HEXFET짰 Power MOSFET
Vishay Siliconix	IRFD310	528Kb / 9P	Power MOSFET 30-Aug-2021

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