15C01C

No.7504-1/4

NPN Epitaxial Planar Silicon Transistor

Applications

•

Low-frequency Amplifier, muting circuit.

Features

•

Large current capacitance.

•

Low collector-to-emitter saturation voltage (resistance).

RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA].

•

Ultrasmall package facilitates miniaturization in end

products.

•

Small ON-resistance (Ron).

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

20

V

Collector-to-Emitter Voltage

VCEO

15

V

Emitter-to-Base Voltage

VEBO

5V

Collector Current

IC

700

mA

Collector Current (Pulse)

ICP

1.4

A

Collector Dissipation

PC

Mounted on a glass epoxy board (20!30!1.6mm)

300

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=15V, IE=0

0.1

µA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0

0.1

µA

DC Current Gain

hFE

VCE=2V, IC=10mA

300

800

Gain-Bandwidth Product

fT

VCE=2V, IC=50mA

330

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

3.2

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=200mA, IB=10mA

150

300

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=200mA, IB=10mA

0.9

1.2

V

Marking : YP

Continued on next page.

Ordering number : ENN7504

15C01C

O3003 TS IM TA-3682

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Low-Frequency

General-Purpose Amplifier Applications

Package Dimensions

unit : mm

2018B

[15C01C]

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

0.4

0.95 0.95

1.9

2.9

0.16

0 to 0.1

2

3

1