IL1 datasheet(2/9 Pages) VISHAY

2 / 9 page

Document Number: 83612

For technical questions, contact: optocoupler.answers@vishay.com

www.vishay.com

Rev. 1.5, 08-May-08

295

IL1/IL2/IL5

Optocoupler, Phototransistor Output,

with Base Connection

Vishay Semiconductors

Notes

(1) Tamb = 25 °C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Note

Tamb = 25 °C, unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

COUPLER

Package power dissipation

Ptot

250

Derate linearly from 25 °C

3.3

mW/°C

Isolation test voltage (between emitter

and detector referred to standard climate

23 °C/50 % RH, DIN 50014)

VISO

5300

VRMS

Creepage distance

≥ 7.0

Clearance distance

≥ 7.0

Comparative tracking index per

DIN IEC 112/VDE 0303, part 1

CTI

175

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

Storage temperature

Tstg

- 40 to + 150

°C

Operating temperature

Tamb

- 40 to + 100

°C

Junction temperature

100

°C

Soldering temperature (2)

2.0 mm from case bottom

Tsld

260

°C

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 60 mA

1.25

1.65

Breakdown voltage

IR = 10 µA

VBR

6.0

Reverse current

VR = 6.0 V

0.01

µA

Capacitance

VR = 0 V, f = 1.0 MHz

Thermal resistance junction to lead

Rthjl

750

K/W

OUTPUT

Collector emitter capacitance

VCE = 5.0 V, f = 1.0 MHz

CCE

6.8

Collector base capacitance

VCB = 5.0 V, f = 1.0 MHz

CCB

8.5

Emitter base capacitance

VEB = 5.0 V, f = 1.0 MHz

CEB

Collector emitter leakage voltage

VCE = 10 V

ICEO

5.0

Collector emitter saturation voltage

ICE = 1.0 mA, IB = 20 µA

VCEsat

0.25

Base emitter voltage

VCE = 10 V, IB = 20 µA

VBE

0.65

DC forward current gain

VCE = 10 V, IB = 20 µA

hFE

200

650

1800

DC forward current gain saturated

VCE = 0.4 V, IB = 20 µA

hFEsat

120

400

600

Thermal resistance junction to lead

Rthjl

500

K/W

COUPLER

Capacitance (input to output)

VI-O = 0 V, f = 1.0 MHz

CIO

0.6

Insulation resistance

VI-O = 500 V

1014

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