MBRF760 datasheet(1/5 Pages) VISHAY

部件名	MBRF760

功能描述	Schottky Barrier Rectifier

PDF	5 Pages

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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MBR(F,B)735 thru MBR(F,B)760

Vishay General Semiconductor

Document Number: 88680

Revision: 08-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Schottky Barrier Rectifier

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

7.5 A

VRRM

35 V to 60 V

IFSM

150 A

VF

0.57 V, 0.65 V

TJ max.

150 °C

CASE

PIN 2

PIN 1

TO-220AC

MBR7xx

ITO-220AC

MBRF7xx

MBRB7xx

PIN 1

PIN 2

K

HEATSINK

1

2

1

2

K

PIN 2

PIN 1

TO-263AB

1

2

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR735

MBR745

MBR750

MBR760

UNIT

Maximum repetitive peak reverse voltage

VRRM

35

45

50

60

V

Working peak reverse voltage

VRWM

35

45

50

60

V

Maximum DC blocking voltage

VDC

35

45

50

60

V

Maximum average forward rectified current (Fig. 1)

IF(AV)

7.5

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

IFSM

150

A

Peak repetitive reverse current at tp = 2.0 µs, 1 kHz

IRRM

1.0

0.5

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/µs

Operating junction temperature range

TJ

- 65 to + 150

°C

Storage temperature range

TSTG

- 65 to + 175

°C

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min

VAC

1500

V

类似零件编号 - MBRF760

制造商	部件名	数据表	功能描述
Vishay Siliconix	MBRF760	64Kb / 3P	Schottky Barrier Rectifier 03-Mar-03
General Semiconductor	MBRF760	117Kb / 2P	SCHOTTKY ISOLATED PLASTIC RECTIFIER
Taiwan Semiconductor Co...	MBRF760	86Kb / 2P	Isolation 7.5 AMPS. Schottky Barrier Rectifiers
	MBRF760	192Kb / 2P	Isolated 7.5 AMPS. Schottky Barrier Rectifiers
	MBRF760	666Kb / 2P	Isolated 7.5 AMPS. Schottky Barrier Rectifiers

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类似说明 - MBRF760

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