IRFU310 datasheet(1/8 Pages) VISHAY

部件名	IRFU310

功能描述	Power MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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1 / 8 page

Document Number: 91272

www.vishay.com

S-81367-Rev. A, 21-Jul-08

1

Power MOSFET

IRFR310, IRFU310, SiHFR310, SiHFU310

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR310/SiHFR310)

• Straight Lead (IRFU310/SiHFU310)

• Available in Tape and Reel

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 52 mH, RG = 25 Ω, IAS = 1.7 A (see fig. 12).

c. ISD ≤ 1.7 A, dI/dt ≤ 40 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1” square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

VDS (V)

400

RDS(on) (Ω)VGS = 10 V

3.6

Qg (Max.) (nC)

12

Qgs (nC)

1.9

Qgd (nC)

6.5

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free

IRFR310PbF

IRFR310TRLPbFa

IRFR310TRPbFa

IRFR310TRRPbFa

IRFU310PbF

SiHFR310-E3

SiHFR310TL-E3a

SiHFR310T-E3a

SiHFR310TR-E3a

SiHFU310-E3

SnPb

IRFR310

IRFR310TRLa

IRFR310TRa

-

IRFU310

SiHFR310

SiHFR310TLa

SiHFR310Ta

-SiHFU310

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

400

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

1.7

A

TC = 100 °C

1.1

Pulsed Drain Currenta

IDM

6.0

Linear Derating Factor

0.20

W/°C

Linear Derating Factor (PCB Mount)e

0.020

Single Pulse Avalanche Energyb

EAS

86

mJ

Repetitive Avalanche Currenta

IAR

1.7

A

Repetitive Avalanche Energya

EAR

2.5

mJ

Maximum Power Dissipation

TC = 25 °C

PD

25

W

Maximum Power Dissipation (PCB Mount)e

TA = 25 °C

2.5

Peak Diode Recovery dV/dtc

dV/dt

4.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

260d

* Pb containing terminations are not RoHS compliant, exemptions may apply

类似零件编号 - IRFU310

制造商	部件名	数据表	功能描述
International Rectifier	IRFU310	173Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
Kersemi Electronic Co.,...	IRFU310	3Mb / 7P	Power MOSFET
Kersemi Electronic Co.,...	IRFU310	3Mb / 7P	Power MOSFET
Inchange Semiconductor ...	IRFU310	340Kb / 2P	iscN-Channel MOSFET Transistor
Vishay Siliconix	IRFU310	835Kb / 13P	Power MOSFET 19-Jul-2021

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