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TA7 数据表(PDF) 2 Page - Vishay Siliconix |
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TA7 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page ![]() www.vishay.com 2 Document Number 81294 Rev. 1.0, 08-Mar-06 MMBZ27VDA-V Vishay Semiconductors Electrical Characteristics Note: 1) V BR measured at pulse test current IT at an ambient temperature of 25 °C 2) Surge current waveform per Figure 2 and derate per Figure 3 Typical Characteristics Tamb = 25 °C, unless otherwise specified Partnumber Breakdown Voltage1) Test Current Working Peak Reverse Voltage Max. Reverse Leakage Current Max. Reverse Surge Current Max. Reverse Voltage (Clamping Voltage) Max. Temperature Coefficient Max. Forward Voltage VBR at IT IT VRWM IR IPP VC at IRSM 2) at VBR VF at IF V mA V nA A V mV/°C V mA min max MMBZ27VDA-V 25.65 28.35 1.0 22.0 80 1.0 38.0 30 1.1 200 Figure 1. Steady State Power Derating Curve Figure 2. Pulse Waveform 0 25 50 75 100 125 150 175 50 0 300 100 150 200 250 ALUMINA SUBSTRATE FR-5 BOARD T, Temperature (°C) 18655 100 50 0 0 1 2 3 4 t, Time (ms) tr tp Peak Value-IRSM Half Value- RSM I 2 Pulse width (tp) is defined as that point where the peak current decays to 50 % of I tr ≤ 10 µs RSM 18656 Figure 3. Pulse Derating Curve 0 25 50 75 100 125 150 175 200 0 25 50 75 TA Ambient Temperature (°C) - 100 18657 |
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