TDA8176 datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

DC ELECTRICAL CHARACTERISTICS (VS = 35V, Tamb = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Pin 5 Quiescent Current

I7 = 0

I11

Pin 11 Quiescent Current

I9 = 0

– I15

Oscillator Bias Current

V15 = 1 V

0.1

µA

– I1

Amplifier Input Bias Current

V1 = 1 V

0.1

µA

– I3

Ramp Generator Bias Current

V3 = 0

0.02

0.3

µA

– I3

Ramp Generator Current

I13 = 20

µA, V3 = 0

18.5

21.5

µA

∆I3

Ramp Generator Non-linearity

∆V12 = 0 to 12 V

I13 = 20

µA

0.2

Supply Voltage Range

Pin 4 Saturation Voltage to Ground

I4 = 1 mA

1.4

Pin 7 Saturation Voltage to Ground

I7 = 10 mA

300

450

Quiescent Output Voltage

Vs = 10 V R1 = 10 k

Ω

R2 = 10 k

Ω

4.1

4.4

4.75

Vs = 35 V R1 = 30 k

Ω

R2 = 10 k

Ω

8.3

8.8

9.45

V9L

Output Saturation Voltage to Ground

– I9 = 0.1 A

0.9

1.2

– I9 = 0.8 A

1.9

2.3

V9H

Output Saturation Voltage to Supply

I9 = 0.1 A

1.4

2.1

I9 = 0.8 A

2.8

3.2

V12

Regulated Voltage at Pin 12

6.1

6.5

6.9

V13

Regulated Voltage at Pin 13

I13 = 10

µA

6.2

6.6

∆V12

∆VS

∆V13

∆VS

Regulated Voltage Drift with Supply Voltage

∆Vs = 10 to 35 V

mV/V

Amplifier Input Reference Voltage

2.07

2.2

2.3

R14

Pin 8 Input Resistance

V14

≤ 0.4 V

Ω

TYPICAL PERFORMANCE OF THE CRCUIT OF FIG.1

Symbol

Parameter

Value

Unit

Operating Supply Voltage

Supply Current

175

tfly

Flyback Time

Ptot

Power Dissipation

3.25

Maximum Scanning Current (peak-to-peak)

1.4

TDA8176

3/5

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