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TDA8178S 数据表(PDF) 3 Page - STMicroelectronics

部件名 TDA8178S
功能描述  TV VERTICAL DEFLECTION BOOSTER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TDA8178S 数据表(HTML) 3 Page - STMicroelectronics

  TDA8178S Datasheet HTML 1Page - STMicroelectronics TDA8178S Datasheet HTML 2Page - STMicroelectronics TDA8178S Datasheet HTML 3Page - STMicroelectronics TDA8178S Datasheet HTML 4Page - STMicroelectronics TDA8178S Datasheet HTML 5Page - STMicroelectronics TDA8178S Datasheet HTML 6Page - STMicroelectronics  
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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VS
Supply Voltage (pin 2)
50
V
V5 ,V6
Flyback Peak Voltage
100
V
V1 ,V7
Amplifier Input Voltage
+ VS
IO
Output Peak Current
Non-repetitive, t = 2ms
f = 50 or 60Hz, t
≤ 10µs
f = 50 or 60Hz, t > 10
µs
2
2
1.8
A
I3
Pin 3 DC at V5 <V2
Pin 3 Peak Flyback Current at f = 50 or 60Hz, tfly
≤ 1.5ms
100
1.8
mA
A
Ptot
Total Power Dissipation at TC =70
oC20
W
Tstg
Storage Temperature
- 40, + 150
oC
Tj
Junction Temperature
0, +150
oC
THERMAL DATA
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction-case Thermal Resistance
Max.
3
oC/W
ELECTRICAL CHARACTERISTICS
(VS = 42V, TA =25
oC, unless otherwise specified) (refer to the test circuits - see Figure 1 next page)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VS
Operating Supply Voltage Range
10
42
V
I2
Pin 2 Quiescent Current
I3 =0
I5 = 0
10
20
mA
I6
Pin 6 Quiescent Current
I3 =0
I5 = 0
20
40
mA
I1
Amplifier Bias Current
V1 = 1V
- 0.2
- 1
µA
V3L
Pin 3 Saturation to GND
I3 = 20mA
1.3
1.8
V
V5
Quiescent Output Voltage
VS = 42V
Ra = 3.9k
Ω
VS = 35V
Ra = 5.6k
Ω
23.4
17
24.2
17.8
25
18.5
V
V5L
Output Saturation Voltage to GND
I5 = 1A
1.2
1.5
V
V5H
Output Saturation Voltage to Supply
- I5 = 1A
2.2
2.6
V
VD5 - 6
Diode Forward Voltage between Pins 5-6
ID = 1A
1.5
3
V
VD3 - 2
Diode Forward Voltage between Pins 3-2
ID = 1A
1.5
3
V
V7
Internal Reference
2.1
2.2
2.3
V
∆V7/∆VS
Reference Voltage Drift versus VS
VS = 24 to 42V
2
4
mV/V
KT
Reference Voltage Drift versus Tj
Tj = 0 to 125
oC
KT
=
∆V7 ⋅ 106
∆Tj ⋅ V7
100
150
ppm/
oC
R1
Input Resistance
200
k
Ω
Tj
Junction Temperature for Thermal
Shutdown
140
oC
TDA8178S
3/6



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