MB2M, MB4M & MB6M

Vishay General Semiconductor

Document Number: 88660

Revision: 01-Feb-08

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PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Voltage Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.01

0.1

1

10

T

T

Instantaneous Forward Voltage (V)

Pulse Width = 300 µs

1 % Duty Cycle

1.5

0.3

0.5

0.7

0.9

1.1

1.3

0

20

40

60

80

100

0.01

0.1

1

10

100

T

T

Percent of Rated Peak Reverse Voltage (%)

Figure 5. Typical Junction Capacitance Per Diode

0.1

1

10

100

0

5

10

15

20

25

30

1000

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.106 (2.70)

0.090 (2.30)

0.147 (3.73)

0.137 (3.48)

0.161 (4.10)

0.144 (3.65)

0.190 (4.83)

0.179 (4.55)

0.029 (0.74)

0.017 (0.43)

0.105 (2.67)

0.095 (2.41)

0.205 (5.21)

0.195 (4.95)

10° to 15°

0.028 (0.71)

0.020 (0.51)

0.016 (0.41)

0.006 (0.15)

0.148 (3.75)

0.132 (3.35)

0.049 (1.24)

0.039 (0.99)

Case Style MBM