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MBRF2545CTHE3/45 数据表(PDF) 1 Page - Vishay Siliconix

部件名 MBRF2545CTHE3/45
功能描述  Dual Common-Cathode Schottky Rectifier
PDF  5 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

MBRF2545CTHE3/45 数据表(HTML) 1 Page - Vishay Siliconix

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MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
Document Number: 88675
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020C, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
35 V to 60 V
IFSM
150 A
VF
0.73 V at 30 A, 0.65 V at 15 A
TJ max.
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25xxCT
ITO-220AB
MBRF25xxCT
MBRB25xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
TO-263AB
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2535CT MBR2545CT MBR2550CT MBR2560CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current
at TC = 130 °C
total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp = 2 µs, 1 kHz
IRRM
1.0
0.5
Peak non-repetitive reverse energy (8/20 µs waveform)
per diode
ERSM
25
mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV


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