MBRF3045CT datasheet(1/5 Pages) VISHAY

部件名	MBRF3045CT

功能描述	Dual Common-Cathode Schottky Rectifier

PDF	5 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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1 / 5 page

New Product

MBR(F,B)3035CT & MBR(F,B)3045CT

Vishay General Semiconductor

Document Number: 88677

Revision: 08-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Dual Common-Cathode Schottky Rectifier

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

15 A x 2

VRRM

35 V, 45 V

IFSM

200 A

VF

0.60 V

TJ max.

150 °C

TO-263AB

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

MBR3035CT

MBR3045CT

ITO-220AB

MBRF3035CT

MBRF3045CT

MBRB3035CT

MBRB3045CT

PIN 1

PIN 2

K

HEATSINK

1

2

3

1

2

K

PIN 2

PIN 1

PIN 3

1

2

3

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR3035CT

MBR3045CT

UNIT

Maximum repetitive peak reverse voltage

VRRM

35

45

V

Working peak reverse voltage

VRWM

35

45

V

Maximum DC blocking voltage

VDC

35

45

V

Maximum average forward rectified current

total device

per diode

IF(AV)

30

15

A

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

IFSM

200

A

Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz

IRRM

2.0

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/µs

Operating junction temperature range

TJ

- 65 to + 150

°C

Storage temperature range

TSTG

- 65 to + 175

°C

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

VAC

1500

V

类似零件编号 - MBRF3045CT

制造商	部件名	数据表	功能描述
Vishay Siliconix	MBRF3045CT	46Kb / 3P	Dual Schottky Rectifiers 02-Oct-02
Taiwan Semiconductor Co...	MBRF3045CT	250Kb / 2P	Isolated 30.0 AMPS. Schottky Barrier Rectifiers
Silicon Standard Corp.	MBRF3045CT	285Kb / 5P	Dual Schottky Barrier Rectifiers
KEC(Korea Electronics)	MBRF3045CT	43Kb / 2P	SCHOTTKY BARRIER TYPE DIODE
Taiwan Semiconductor Co...	MBRF3045CT	180Kb / 2P	30.0 AMPS. Isolated Schottky Barrier Rectifiers

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