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ST280S06P0VPBF 数据表(PDF) 2 Page - Vishay Siliconix

部件名 ST280S06P0VPBF
功能描述  Phase Control Thyristors (Stud Version), 280 A
PDF  7 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

ST280S06P0VPBF 数据表(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: ind-modules@vishay.com
Document Number: 94402
2
Revision: 11-Aug-08
ST280SPbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 280 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
280
A
85
°C
Maximum RMS on-state current
IT(RMS)
DC at 75 °C case temperature
440
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
7850
t = 8.3 ms
8220
t = 10 ms
100 % VRRM
reapplied
6600
t = 8.3 ms
6900
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
310
kA2s
t = 8.3 ms
220
t = 10 ms
100 % VRRM
reapplied
218
t = 8.3 ms
200
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
3100
kA2
√s
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.84
V
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
0.88
Low level value of on-state slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.50
m
Ω
High level value of on-state slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.47
Maximum on-state voltage
VTM
Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.28
V
Maximum holding current
IH
TJ = 25 °C, anode supply 12 V resistive load
600
mA
Maximum (typical) latching current
IL
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
dI/dt
Gate drive 20 V, 20
Ω, t
r ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
1000
A/µs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
µs
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA



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