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THBT200S 数据表(PDF) 3 Page - STMicroelectronics |
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THBT200S 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() Ipp I V IBO IH VRM VBR VBO IRM Symbol Parameter VRM Stand-off voltage IRM Leakage current at VRM VBR Continuous reverse voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C). IRM @VRM VBR @IR VBO @ IBO IH C max. min. max. min. max. min. max. note 1 note 2 note 3 µA V V mA V mA mA mA pF 10 180 200 1 290 150 800 150 200 Note 1 : See reference test circuit 1 for IBO and VBO parameters. Note 2 : See test circuit 2. Note 3 :VR = 1V, F = 1MHz. PARAMETERS RELATED TO ONE TRISIL (Between TIP and GND or RING and GND) ® THBT200S 3/7 |
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