THBT7011D datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

TEST CIRCUIT 1 for IBO and VBO parameters:

static

relay.

240

140

D.U.T

V BO

measure

IBO

measure

tp =20ms

Transformer

220V/800V

Auto

Transformer

220V/2A

Vout

TEST PROCEDURE :

Pulse Test duration (tp = 20ms):

- For Bidirectional devices = Switch K is closed

- For Unidirectional devices = Switch K is open.

VOUT Selection

- Device with VBO

< 200 Volt

-VOUT = 250 VRMS,R1 = 140

Ω.

- Device with VBO

≥ 200 Volt

-VOUT = 480 VRMS,R2 = 240

Ω.

Type

IRM @VRM

IR @VR

max.

note 6

max.

note 6

max

note 4

µAV

THBT7011D

132

140

Note 1:

IR measured at VR guarantees VBR >VR

Note 2:

Measured at 50 Hz (1 cycle) test circuit 1.

Note 3:

See the reference test circuit 2.

Note 4:

VR = 1V, F = 1MHz.

Note 5 :

See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card.

Note 6:

Ground not connected or |VTIP|= |VRING| versus Ground

STATIC PARAMETERS BETWEEN TIP AND RING

Type

Symbol

Test conditions (see note 5)

Maximum

Unit

THBT7011D

VBO

10/700

µs 1.5kV

Rp=10

Ω

IPP=30A

1.2/50

µs

1.5kV

Rp=10

Ω

IPP=30A

2/10

µs

2.5kV

Rp=62

Ω

IPP=38A

150

DYNAMIC BREAKOVER VOLTAGES (Transversal mode)

THBT7011D

4/8

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