TIP105 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

1.56

62. 5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-of f

Current (IB =0)

for TIP105

VCE =30 V

for T IP102/ TIP107

VCE =50 V

µA

ICBO

Collector Cut-of f

Current (IE =0)

for TIP105

VCB =60 V

for T IP102/ TIP107

VCB =100 V

µA

IEBO

Emitter Cut-of f Current

(IC =0)

VEB =5 V

VCEO(sus )* Collector-Emitt er

Sustaining Volt age

(IB =0)

IC =30 mA

for TIP105

for T IP102/ TIP107

100

VCE(sat)*

Collector-Emitt er

Sat uration Voltage

IC =3 A

IB =6 mA

IC =8 A

IB =80 mA

2. 5

VBE *

Base-Emitter Volt age

IC =8 A

VCE =4 V

2. 8

hFE*

DC Current G ain

IC =3 A

VCE =4 V

IC =8 A

VCE =4 V

1000

200

20000

VF*Forward Voltage of

Commut ation Diode

(IB =0)

IF =- IC =10 A

2. 8

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Area

TIP102 / TIP105 / TIP107

2/4

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