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UGF8HT 数据表(PDF) 3 Page - Vishay Siliconix |
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UGF8HT 数据表(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() UG(F,B)8HT & UG(F,B)8JT Vishay General Semiconductor Document Number: 88767 Revision: 12-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 3. Typical Instantaneous Forward Characteristics 0 12 10 6 8 2 4 25 50 75 100 125 150 175 Case Temperature (°C) Resistive or Inductive Load UG8F UG8, UGB8 100 10 1000 1 100 10 T J = TJ max. 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) 0.01 0.1 10 100 1 T J = 25 °C max. Pulse Width = 300 µs 1 % Duty Cycle Figure 4. Typical Reverse Leakage Characteristics Figure 5. Typical Junction Capacitance Figure 6. Reverse Switching Characteristics 60 40 20 0 100 80 10 100 1000 10 000 1 T J = 100 °C T J = 125 °C T J = 25 °C Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) 1 0.1 10 100 100 10 1 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0 300 350 250 150 200 50 100 25 50 75 100 125 150 Q rr T rr I F = 8.0 A V r =30 V 50 A/µs 240 A/µs 60 A/µs 50 A/µs 60 A/µs 240 A/µs Junction Capacitance (°C) |
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