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UG18ACT 数据表(PDF) 2 Page - Vishay Siliconix |
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UG18ACT 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page ![]() UG(F,B)18ACT thru UG(F,B)18DCT Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88759 Revision: 09-Nov-07 2 Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle Note: (1) Automotive grade AEC Q101 qualified ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT UNIT Maximum instantaneous forward voltage per diode (1) 9.0 A 20 A 5.0 A TJ = 100 °C VF 1.1 1.2 0.95 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C TA = 100 °C IR 10 300 µA Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 ns Maximum reverse recovery time per diode IF = 9.0 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C TJ = 100 °C trr 30 50 ns Maximum stored charge per diode IF = 9.0 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C TJ = 100 °C Qrr 20 45 nC Typical junction capacitance per diode at 4.0 V, 1 MHz CJ 30 pF THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG18 UGF18 UGB18 UNIT Typical thermal resistance from junction to case per diode RθJC 4.0 6.0 4.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB UG18DCT-E3/45 1.85 45 50/tube Tube ITO-220AB UGF18DCT-E3/45 2.00 45 50/tube Tube TO-263AB UGB18DCT-E3/45 1.35 45 50/tube Tube TO-263AB UGB18DCT-E3/81 1.35 81 800/reel Tape and reel TO-220AB UG18DCTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB UGF18DCTHE3/45 (1) 2.00 45 50/tube Tube TO-263AB UGB18DCTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB UGB18DCTHE3/81 (1) 1.35 81 800/reel Tape and reel |
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