TIP117 datasheet(2/6 Pages) STMICROELECTRONICS

部件名	TIP117

功能描述	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	6 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

2.5

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEO

Collector Cut -of f

Current (IB =0)

VCE = Half Rated VCEO

2mA

ICBO

Collector Cut -of f

Current (IE =0)

VCB =Rated VCBO

1mA

IEBO

Emitt er Cut -of f Current

(IC =0)

VEB =5 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =30 mA

for TIP110/115

for TIP112/117

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =2 A

IB =8 mA

2.5

VBE

∗

Base-Emitt er Voltage

IC =2 A

VCE =4 V

2.8

hFE

∗

DC Current Gain

IC =1 A

VCE =4 V

IC =2 A

VCE =4 V

1000

500

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Areas

Derating Curve

TIP110/TIP112/TIP115/TIP117

2/6

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