TIP147T datasheet(2/4 Pages) STMICROELECTRONICS

部件名	TIP147T

功能描述	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	4 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.38

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 100 V

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 50 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

100

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 10 mA

IC = 10 A

IB = 40 mA

VBE(on)*

Base-Emitter Voltage

IC =10 A

VCE = 4 V

hFE*

DC Current Gain

IC = 5 A

VCE = 4 V

IC = 10 A

VCE = 4 V

1000

500

ton

toff

RESISTIVE LOAD

Turn-on Time

Turn-off Time

IC = 10 A

IB1 = 10 mA

IB2 = -40 mA

RL = 3

Ω

0.9

µs

For PNP types voltage and current values are negative.

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

TIP142T / TIP147T

2/4

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