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IL766 数据表(PDF) 2 Page - Vishay Siliconix

部件名 IL766
功能描述  Optocoupler, Photodarlington Output, AC Input, Internal RBE
PDF  8 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

IL766 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number 83643
Rev. 1.4, 26-Oct-04
VISHAY
IL766/ ILD766
Vishay Semiconductors
Output
Each Channel
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown voltage
BVCEO
60
V
Collector-base breakdown voltage
BVCBO
70
V
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.33
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage
t = 1.0 sec.
VISO
5300
VRMS
Isolation resistance
Tamb = 25 °C
RIO
≥ 1012
Tamb = 100 °C
RIO
≥ 1011
Total power dissipation (LED plus detector),
single channel
Ptot
250
mW
Total power dissipation (LED plus detector),
dual channel
Ptot
400
mW
Derate linearly from 25 °C, single channel
3.3
mW/°C
Derate linearly from 25 °C, dual channel
5.3
mW/°C
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Comparative tracking index per DIN IEC
112/VDE0303, part 1
175
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to +100
°C
Lead soldering time at 260 °C
Tsld
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = ± 10 mA
VF
1.2
1.5
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown voltage
IC = 1.0 mA
BVCEO
60
75
V
Collector-base breakdown voltage
IC = 10 µABVCBO
60
90
V
Collector-emitter leakage current
VCE = 10 V
ICEO
10
100
nA
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Saturation voltage, collector-emitter
IF = ± 10 mA,
IC = 10 mA
VCEsat
1.0
V



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