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IL766 数据表(PDF) 2 Page - Vishay Siliconix |
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IL766 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page ![]() www.vishay.com 2 Document Number 83643 Rev. 1.4, 26-Oct-04 VISHAY IL766/ ILD766 Vishay Semiconductors Output Each Channel Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 60 V Collector-base breakdown voltage BVCBO 70 V Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.33 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage t = 1.0 sec. VISO 5300 VRMS Isolation resistance Tamb = 25 °C RIO ≥ 1012 Ω Tamb = 100 °C RIO ≥ 1011 Ω Total power dissipation (LED plus detector), single channel Ptot 250 mW Total power dissipation (LED plus detector), dual channel Ptot 400 mW Derate linearly from 25 °C, single channel 3.3 mW/°C Derate linearly from 25 °C, dual channel 5.3 mW/°C Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE0303, part 1 175 Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to +100 °C Lead soldering time at 260 °C Tsld 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = ± 10 mA VF 1.2 1.5 V Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 1.0 mA BVCEO 60 75 V Collector-base breakdown voltage IC = 10 µABVCBO 60 90 V Collector-emitter leakage current VCE = 10 V ICEO 10 100 nA Parameter Test condition Symbol Min Typ. Max Unit Saturation voltage, collector-emitter IF = ± 10 mA, IC = 10 mA VCEsat 1.0 V |
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