GATE CHARACTERISTICS (maximum values)

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient on printed circuit with Cu surface 1cm2

50

°C/W

Rth (j-l) DC Junction leads for DC

20

°C/W

Rth (j-l) AC

Junction leads for 360

° conduction angle ( F= 50 Hz)

15

°C/W

Symbol

Test Conditions

Quadrant

Suffix

Unit

TD

S

A

IGT

VD=12V

(DC)

RL=33Ω

Tj=25

°C

I-II-III

MAX

5

5

10

10

mA

IV

MAX

5

10

10

25

VGT

VD=12V

(DC)

RL=33Ω

Tj=25

°C

I-II-III-IV

MAX

1.5

V

VGD

VD=VDRM RL=3.3kΩ

Tj=110

°C

I-II-III-IV

MIN

0.2

V

tgt

VD=VDRM IG = 40mA

dIG/dt = 0.5A/µs

Tj=25

°C

I-II-III-IV

TYP

2

µs

IL

IG= 1.2 IGT

Tj=25

°C

I-III-IV

MAX

15

15

25

25

mA

II

15

15

25

25

IH *IT= 100mA gate open

Tj=25

°C

MAX

15

15

25

25

mA

VTM *ITM= 4A tp= 380µs

Tj=25

°C

MAX

1.85

V

IDRM

IRRM

VDRM Rated

VRRM Rated

Tj=25

°C

MAX

0.01

mA

Tj=110

°C

MAX

0.75

dV/dt *

Linear

slope

up

to

VD=67%VDRM

gate open

Tj=110

°C

TYP

10

10

20

20

V/

µs

(dV/dt)c *

(dI/dt)c = 1.3A/ms

Tj=110

°C

TYP

11

55

V/

µs

PG (AV) = 0.1W

PGM =2W(tp =20 µs)

IGM =1A (tp =20 µs)

VGM = 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

THERMAL RESISTANCES

TLC116 T/D/S/A ---> TLC386 T/D/S/A

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