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TMBAT 49

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION

General purpose metal to silicon diode featuring

very low turn-on voltage and fast switching.

This device has integrated protection against ex-

cessive voltage such as electrostatic discharges.

August 1999 Ed 1A

MELF

(Glass)

Symbol

Parameter

Value

Unit

Repetitive Peak Reverse Voltage

80

V

Forward Continuous Current

°C

500

mA

Repetitive Peak Forward Current

tp = 1s

δ ≤ 0.5

3A

Surge non Repetitive Forward Current

10

A

Storage and Junction Temperature Range

- 65 to + 150

- 65 to + 125

°C

°C

Maximum Temperature for Soldering during 15s

260

°C

ABSOLUTE MAXIMUM RATINGS (limiting values)

Symbol

Test Conditions

Value

Unit

Junction-leads

110

°C/W

THERMAL RESISTANCE

≤ 300µs δ < 2%.

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

200

µA

0.32

V

0.42

1

STATIC CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

C

°C

f = 1MHz

120

pF

35

DYNAMIC CHARACTERISTICS

1/4