TLP140M datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Type

IRM @VRM

IR @VR

max.

typ.

note

µAV

TLP140M/G/G-1

120

140

TLP200M/G/G-1

180

200

TLP270M/G/G-1

230

270

Note : VR = 50 V bias, VRMS = 1V, F = 1 MHz.

ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING (Tamb =25

°C)

Type

IRM @VRM

IR @VR

VBO

IBO

C @ VR

max.

min.

typ.

note 1

note 2

note 3

note 4

note 5

µAV

TLP140M/G/G-1

120

140

200

500

150

110

TLP200M/G/G-1

180

200

290

500

150

110

TLP270M/G/G-1

230

270

400

500

150

110

Note 1: IR measured at VR guarantees VBR min >VR.

Note 2: Measured at 50 Hz.

Note 3: See functional holding current test circuit.

Note 4: VR = 0V bias, VRMS = 1V, F = 1 MHz.

Note 5: VR = 50V bias, VRMS = 1V, F = 1 MHz (TIP or RING (-) / GND (+)).

ELECTRICAL CHARACTERISTICS BETWEEN TIP AND GND, RING AND GND (Tamb =25

°C)

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TLPxxM

TLPxxG

TLPxxG-1

1.0

°C/W

Rth (j-a)

Junction to ambient

TLPxxM

TLPxxG

TLPxxG-1

see table page 14

°C/W

THERMAL RESISTANCE

TLPxxM/G/G-1

4/14

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