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TMMBAT46 数据表(PDF) 1 Page - STMicroelectronics |
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TMMBAT46 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() ® TMMBAT 46 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. August 1999 Ed: 1A MINIMELF (Glass) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 100 V IF Forward Continuous Current Tl = 25 °C 150 mA IFRM Repetitive Peak Fordware Current tp ≤ 1s δ ≤ 0.5 350 mA IFSM Surge non Repetitive Forward Current tp = 10ms 750 mA Ptot Power Dissipation Tl = 80 °C 150 mW Tstg Tj Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 °C °C TL Maximum Temperature for Soldering during 15s 260 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit Rth(j-l) Junction-leads 300 °C/W THERMAL RESISTANCE 1/4 |
类似零件编号 - TMMBAT46 |
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类似说明 - TMMBAT46 |
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