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TMMBAT48 数据表(PDF) 1 Page - STMicroelectronics |
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TMMBAT48 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() ® TMMBAT 47 TMMBAT 48 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. August 1999 Ed: 1A MINIMELF (Glass) Symbol Parameter TMMBAT47 TMMBAT48 Unit VRRM Repetitive Peak Reverse Voltage 20 40 V IF Forward Continuous Current Tl = 25 °C 350 mA IFRM Repetitive Peak Fordward Current tp ≤ 1s δ ≤ 0.5 1A IFSM Surge non Repetitive Forward Current tp = 10ms 7.5 A tp = 1s 1.5 Ptot Power Dissipation Tl = 25 °C 330 mW Tstg Tj Storage and Junction Temperature Range - 65 to 150 - 65 to 125 °C °C TL Maximum Temperature for Soldering during 15s 260 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit Rth(j-l) Junction-leads 300 °C/W THERMAL RESISTANCE 1/5 |
类似零件编号 - TMMBAT48 |
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类似说明 - TMMBAT48 |
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